Описание
Vishay Semiconductors SUD90330E-GE3 MOSFET
Происхождение товара
United States
Рабочая Температура
- 55 C to + 175 C
Транзистор типа
1 N-Channel
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
200 V
Id - Continuous Drain Current
35.8 A
Rds On - Drain-Source Resistance
31.2 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Pd - Power Dissipation
125 W